Single- and dual-variant atomic ordering in GaAsP compositionally graded buffers on GaP and Si substrates
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چکیده
منابع مشابه
Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates Citation
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ژورنال
عنوان ژورنال: Journal of Crystal Growth
سال: 2019
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2018.10.007